Generalized Asymmetrical Bidirectional Associative Memory*

نویسندگان

  • Tae-Dok Eom
  • Changkyu Choi
  • Ju-Jang Lee
چکیده

A classical bidirectional associative memory (BAM) suffers from low storage capacity and abundance of spurious memories though it has the properties of good generalization and noise immunity. In this paper, Hamming distance in recall procedure of usual asymmetrical BAM is replaced with modified Hamming distance by introducing weighting matrix into connection matrix. This generalization is validated to increase storage capacity, to lessen spurious memories, and to enhance noise immunity using simulation work.

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تاریخ انتشار 1999